PART |
Description |
Maker |
MAGX-001214-500L00-V2 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solu...
|
MAGX-001090-600L00 MAGX-001090-SB0PPR |
GaN on SiC HEMT Pulsed Power Transistor Common-Source Configuration
|
M/A-COM Technology Solutions, Inc.
|
MAGX-003135-SB5PPR MAGX-003135-120L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
MAGX-003135-SB3PPR MAGX-003135-180L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
RFHA1006 |
9W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
GRM21BF51C106ZE15L GRM188R71H103KA01D 100A0R8BW150 |
30MHz TO 512MHz, 9W GaN WIDEBAND
|
RF Micro Devices
|
PH1214-20EL |
Radar Pulsed Power Transistor, 20W, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz Radar Pulsed Poewr Transistor20W 雷达脉冲Poewr晶体管,20
|
Tyco Electronics Rhopoint Components, Ltd.
|
MRF6522-60 MRF6522-70 |
Trans RF MOSFET N-CH 60V 7A 3-Pin Case 360B-04 Trans RF MOSFET N-CH 65V 7A 3-Pin NI-600
|
New Jersey Semiconductors
|
2N5229 2N5230 |
Trans GP BJT PNP 25V 3-Pin TO-92 Box Trans GP BJT NPN 50V 0.1A 3-Pin TO-92 T/R
|
New Jersey Semiconductor
|